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ON SEMICONDUCTOR MJD127G Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 1.75 W, -8 A, 12 hFE Goggles Battery and Power 3 stud

SKU 45185533110
4.0
USD116.89 USD144.89

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Ships within 48 hours · Estimated delivery Aug 12 - Aug 17

Description

Battery and Power 3 stud Anton Bauer Voltage 12 - 14

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ON SEMICONDUCTOR MJD127G Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 1.75 W, -8 A, 12 hFE Goggles Battery and Power 3 studThis is a Bipolar (BJT) Single Transistor, Darlington, PNP, 100 V, 1. 75 W, 8 A, 12 hFE product from ON SEMICONDUCTOR with the model number MJD127GProduct details Power Dissipation Pd 1. 75W DC Collector Current 8A Collector Emitter Voltage V(br)ceo 100V Transition Frequency ft Operating Temperature Max 150C Transistor Polarity PNP DC Current Gain hFE 12hFE No. of Pins 3Pins Product Range Automotive Qualification Standard Transistor Case Style TO 252

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  • Final sale items are not eligible for returns or exchanges.
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